20 stern ave. springfield, new jersey 07081 u.s.a. telephone (201) 376-2922 (212)227-6005 fax: (201) 376-8960 designer's data sheet power field effect transistor im-channel enhancement-mode silicon gate tmos these tmos power fets are designed for medium voltage, high speed power switching applications such as switching regu- lators, converters, solenoid and relay drivers. ? silicon gate for fast switching speeds ? switching times specified at 100c ? designer's data ? idss* vds(on)- vqs(th) and soa specified at elevated temperature ? rugged ? soa is power dissipation limited ? source-to-drain diode characterized for use with inductive loads MTP10N35 mtp10n40 tmos power fets 10 amperes "-ds(on) = 0.55 ohm 350 and 400 volts maximum ratings thermal characteristics rating drain-source voltage^ drain-gate voltage (rgs = 1 mfii gate-source voltage ? continuous ? non-repetitive up s; 50 /is} drain current continuous pulsed total power dissipation (n trj = 25c derate above 25c operating and storage temperature range symbol vdss vdgr vgs vgsm id idm pd tj, t5tg mtp 10n35 350 350 10n40 400 400 r20 -40 10 40 125 1 -65to 150 unit vdc vdc vdc vpk adc watts w,"c ?c to-220ab thermal resistance ? junction to case ? junction to ambient maximum lead temperature for soldering purposes, 18" from case for 5 seconds rwc rflja tl i 62.5 275 c/w *c
20 stern ave. springfield, new jersey 07081 u.s.a. telephone (201) 376-2922 (212)227-6005 fax: (201) 376-8960 electrical characteristics (tc = 2sc unless otherwise noted) characteristic symbol mln max unit off characteristics drain-source breakdown voltage (vgs = 0. id = "-25 ma) MTP10N35 mtp10n40 zero gate voltage drain current (vds = rated vdss. vgs - ol (vds = 0.8 rated vrjss. vgs = 0, tj = 125c) gate-body leakage current, forward (vqsf = 20 vdc, vds = 01 gate-body leakage current, reverse (vqsr = 20 vdc. vds - 01 v(br)dss idss igssf igssr 350 400 - ? ? - 0.2 1 100 100 vdc madc nadc nadc on characteristics* gate threshold voltage (vds = vgs. 'o - i mai tj = 100c static drain-source on-resistance (vgs = 10 vdc, id = 5adc) drain-source on-voltage (vgs = 10v) (id = 10adc) (id = sadc, tj = 100c) forward transconductance (vds = 10 v. id = 5 a) vqsith) rds(on) voslonl 9fs 2 1.5 ? ? ? 4 4.5 4 0.55 6 4.75 ? vdc ohm vdc mhos dynamic characteristics input capacitance output capacitance reverse transfer capacitance (vds - 25 v vgs ~ o f = 1 mhz) see figure 11 ciss coss crss - - - 1600 350 150 pf switching characteristics* (tj = 100c) turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge (vdd = 25 v, id = 0.5 rated id see figures 9, 13 and 14 (vds ~ 8 rated vdss. id = rated id. vgs = 10 v) see figure 12 'dlonl ?r 'd(off) tf q9 qgs qgd ? - ? - 40 (typ) 20 (typ) 20 (typl 60 150 200 120 60 - - ns nc source drain diode characteristics* forward on-vottage forward turn-on time reverse recovery time (is ~ rated id vgs = 0) vsd *on |
